THERMAL EVAPORATION was used to create pure CdS thin films, which were then analyzed using XRD and UV-VIS spectroscopy. With changes in thickness, it was discovered that the particle size decreased from 23.6 nm to 21.7 nm. From the XRD data, the impact of thickness on strain and dislocation has been estimated. To determine how optical characteristics changed as thickness changed, transmission data were examined in the 200–1100 nm spectral range. Additionally, it was found that as thickness increased, between 2.444 and 2.401 eV, the band gap decreased.

This research describes the thermopower and electric conductivity of CdTe films produced using THERMAL EVAPORATION technology; the energy activation value of this electrical and thermoelectrically properties are estimated. CdTe sheets have an electrical resistance of about (107. cm). Conductivity was studied, and it was found that the electrical conductivity increased with temperature. At low temperatures, there are two values of activation energy $(Ea1=0.337 eV)$ because of this dependence, but at high temperatures, $(Ea2 = 0.702 eV)$ is the only value of activation energy. The Seebeck coefficient (thermopower) was researched to find that it was temperature-dependent, and it was found that, as the temperature increased, the Seebeck coefficient decreased. The experiment results on thermoelectric power were summarized in a two-paragraph statement. The activation energy was measured to be $(ES = 0.561 eV)$, and the CdTe film was shown to be p-type conductive.

ZnS nanowires films on Si (100) substrate have been obtained, using PbS as dopant, via THERMAL EVAPORATION technique. High resolution transmission electron microscopy (HRTEM) images have confirmed the formation of ZnS nanowires. Energy dispersive X-ray analysis (EDX) has been employed to investigate the element’s contents (mapping and area analysis) and it has confirmed that the ZnS films were stoichiometry. Thickness and morphology of the films were explored from cross section of the films and surface, respectively, using scanning electron microscopy (SEM) and atomic force microscopy (AFM) images. These images confirmed the creation of ZnS nanostructures morphology. The diameter of the obtained nanowires is about 50 nm and their length is several micrometer. Fourier-transform infrared spectroscopy (FTIR), X-Ray Diffraction (XRD), and Photoluminance (PL) have confirmed the hexagonal phase with nanowires structure. UV-Vis characterization has been used to obtain the transparency and the band gap of ZnS films deposited on glass substrate. Also, these verified characterizations allowed to potential optical application in optoelectronic field

Thin layers of ZnS in two different temperature conditions of 25 or 20000C and also with different thicknesses from 100nm to 600nm were prepared by physical vapor deposition. Absorption and also transmission spectra of the films were obtained to determine absorption coefficient, extinction constant and optical band gap of the films. It was found that by decreasing the substrate temperature or decreasing the film's thickness, optical band gap of ZnS films were increased or decreased, respectively. These phenomena can be attributed to the quantum size effect.

Cadmium telluride (CdTe) nanoparticles were deposited on glass substrates coated by indium tin oxide (ITO) and fluorine doped tin oxide (FTO) as transparent conducting films at 200 °C under pressure of 2×10-5 mbar. The thickness of the prepared films prepared was about 200 nm. The structure, optical, electrical, and morphological properties of the layers were analyzed by x-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectroscopy, current-voltage (IV) characterization, and scanning electron microscopy (SEM), respectively. XRD patterns show the cubic structure of the deposited CdTe thin film on both ITO and FTO substrates. The preferred orientation of deposited films also changed from (111) for ITO substrate to (220) for FTO substrate. The crystallite size of films on ITO and FTO in these orientations were about 23.41 and 34.84 nm, respectively. The thin-film transmittance spectra were determined using UV-Vis spectroscopy in the wavelength range of 200-1200 nm. The optical energy bandgap of thin films on ITO and FTO substrates was calculated to be 1.60 and 1.63 eV, respectively. The I-V curve shows more electrical conductivity of the CdTe thin film on the FTO compared to the ITO. The surface morphology images show homogeneity and uniformity of the surface.

The nanocrystalline ZnS semiconducting thin films of 500 nm thickness have been deposited on glass substrate at different substrate temperatures (Ts) by THERMAL EVAPORATION technique. The structural property of deposited thin films has been measured by X-ray diffraction, scanning electron microscopy, and Energy dispersive analysis of X-ray. The electrical and optical properties of thin films have been determined by D.C. two point probe and ultraviolet visible spectroscopy measurements. The X-ray diffraction patterns show that thin films have cubic structure. The electrical resistivity of thin films has decreased from 0.36´106 to 0.15´106 W cm as substrate temperature increases from 300 to 400 K. It shows that films have semiconducting in nature. The grain size and electrical conductivity of the thin films have increased as the deposition temperature increased while dislocation density, activation energy, and band gap decreased. The minimum band gap 3.43eV has been found.

Tellurium nanostructures have attracted much interest due to their interesting properties such as gas sensing, photoconductivity, nonlinear optical response, and high thermoelectric or piezoelectric responses. Crystalline Tellurium nanowires were successfully synthesized at 10-1 mbar, 10-2 mbar, and 10-3 mbar pressures by thin film fabrication via EVAPORATION of Tellurium powder and its condensation on glass substrates at different temperatures in a tube furnace. The morphology and size of the products were studied using field emission scanning electron microscopy (FESEM). The synthesized nanowires have diameters between 46 and 100 nm and lengths up to several micrometers. X-Ray diffractometry (XRD) was carried out to characterize crystal structure of the products. The peaks of the diffractogram were successfully indexed assuming the hexagonal crystal structure of Tellurium.